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1. InSb wafer,InSb substrates, Indium Antimonide

Indium antimonide can be supplied as ingots or ingot sections or as-cut, etched or polished wafers.

Growth Method: Cz
Dopant: Undoped,Te,Ge
Type: N or P
Orientation: (100),(111),(110)
Diameter: 2inch 3inch
Thickness: 500-800um
Surface ...

2. GaSb Wafer, GaSb substrates,Gallium Antimonide

Gallium Antimonide can be supplied as ingots or ingot sections or as-cut, etched or polished wafers.

Growth Method: LEC
Dopant: Undoped,Zn,Te
Type: N or P
Orientation: (100),(111),(110)
Diameter: 2inch 3inch
Thickness: 500-625um
Surface ...

3. InP wafer,InP substrates,Indium Phosphide

Indium phosphide can be supplied as ingot sections or as-cut, etched or polished wafers.

Growth Method: LEC
Dopant: undoped,S,Fe,Zn.
Type: N , SI or P
Orientation:(100),(111),(110)
Diameter: 2inch 3inch
Thickness: 350-625um
Surface ...

4. InAs Wafer, InAs substrates, Indium Arsenide

Indium arsenide can be supplied as ingots ections, as-cut, etched or polished wafers.

Growth Method: LEC
Dopant: Undoped,S,Sn,Zn,Mn
Type: N or P
Orientation: (100),(111),(110)
Diameter: 2inch 3inch
Thickness: 500-625um
Surface Treatment:SSP ...

5. GaAs wafer,GaAs substrate,Gallium Arsenide

Gallium arsenide can be supplied as ingots or ingot sections or as-cut, etched or polished wafers.

Semi-insulating GaAs
Vertical Gradient Freeze growing method is used
2", 3", 4" ingots
2", 3", 4",6" ...